Physical electronics devices and ics miscellaneous
- The transistor in the amplifier shown has following parameters: hfe = 100, hi e = 2 k Ω, hre = 0, hoe = 0.05 m mho. C is very large. The output impedance is—
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We know the output impedance, of CE configuration in terms of h-parameter is given as
Y0 = hoe – hfe·hre , hie + RS
where RS = source resistance= 0.05 × 10–3 – 100 × 0 2 × 103 + RS
= 0.05 × 10–3or Z0 = 1 = 1 = 20 kΩ Y0 0.05 × 10–3
Hence alternative (A) is the correct answer.Correct Option: A
We know the output impedance, of CE configuration in terms of h-parameter is given as
Y0 = hoe – hfe·hre , hie + RS
where RS = source resistance= 0.05 × 10–3 – 100 × 0 2 × 103 + RS
= 0.05 × 10–3or Z0 = 1 = 1 = 20 kΩ Y0 0.05 × 10–3
Hence alternative (A) is the correct answer.
- The quiescent collector current IC of a transistor is increased by changing the biasing resistance. As a result gm will—
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As we know that
R0 = dV , dIC
on increasing quiescent collector current IC, the output resistance R0 decreases, as a result gm.gm = gm0 1 increases. R0
Hence alternative (C) is the correct answer.Correct Option: C
As we know that
R0 = dV , dIC
on increasing quiescent collector current IC, the output resistance R0 decreases, as a result gm.gm = gm0 1 increases. R0
Hence alternative (C) is the correct answer.
- Which of the following statement are correct for basic transistor amplifier configuration?
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(A) and (B) Since CB configuration has low input impedance and low current gain and CC configuration has low output impedance and a high current gain.
Correct Option: E
(A) and (B) Since CB configuration has low input impedance and low current gain and CC configuration has low output impedance and a high current gain.
- The parameters of an FET are gm = 3 mA/V, id = 30 k. RL = 3 k as a source follower load. The output impedance is given by—
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Given that, gm = 3 mA/V, rd = 30 k, RL = 3 k, R0 =?
We know thatR0 = R'L 1 + gmR'L
in the case of source follower Where, R′L = RL || rd = 3 k || 30 k= 3 × 30 ≈ 3 k. 3 + 30 Now, R0 = 3000 1 + 3 × 10–3 × 3000 = 3000 = 3000 = 300 Ω 1 + 3 × 3 10
Hence alternative (D) is the correct answer.Correct Option: D
Given that, gm = 3 mA/V, rd = 30 k, RL = 3 k, R0 =?
We know thatR0 = R'L 1 + gmR'L
in the case of source follower Where, R′L = RL || rd = 3 k || 30 k= 3 × 30 ≈ 3 k. 3 + 30 Now, R0 = 3000 1 + 3 × 10–3 × 3000 = 3000 = 3000 = 300 Ω 1 + 3 × 3 10
Hence alternative (D) is the correct answer.
- Given for an FET, gm = 9.5 mA/volt. Total capacitance = 500 pF. For a voltage gain of – 30 the bandwidth will be—
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Given that gm = 9.5 mA/volt, total capacitance = 500 pF, voltage gain (A0) = – 30, BW =? We know that
A0 × BW = gm C
where, A0 = gain
BW = Bandwidth
C = Total capacitance
gm = Transconductance.or BW = gm A0·C or BW = 9.5 × 10–3 30 × 500 × 10–12
or BW = 100 kHz
Hence alternative (A) is the correct answer.Correct Option: A
Given that gm = 9.5 mA/volt, total capacitance = 500 pF, voltage gain (A0) = – 30, BW =? We know that
A0 × BW = gm C
where, A0 = gain
BW = Bandwidth
C = Total capacitance
gm = Transconductance.or BW = gm A0·C or BW = 9.5 × 10–3 30 × 500 × 10–12
or BW = 100 kHz
Hence alternative (A) is the correct answer.