Physical electronics devices and ics miscellaneous
- The JFET in the circuit shown in figure has an IDSS = 10 mA and VP = 5 V. The value of the resistance RS for a drain current IDS = 6.4 mA is (select the nearest value)—
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We know that IDS = IDSS …(a)
Given that, IDS = 6.4 10–3 A
VP = 5V
IDSS = 10 10–3 A
VGS =?6.4 10–3 = 10 10–3 1 - VGS 2 - 5 1 VGS = √.64= 8 - 5
or VGS = 1V
Now, IDS RS = VGS = (1V)RS = 1 = 156Ω 6·4 × 10–3
Since 156 Ω is very close to 150 Ω.
Hence alternative (A) is correct answer.Correct Option: A
We know that IDS = IDSS …(a)
Given that, IDS = 6.4 10–3 A
VP = 5V
IDSS = 10 10–3 A
VGS =?6.4 10–3 = 10 10–3 1 - VGS 2 - 5 1 VGS = √.64= 8 - 5
or VGS = 1V
Now, IDS RS = VGS = (1V)RS = 1 = 156Ω 6·4 × 10–3
Since 156 Ω is very close to 150 Ω.
Hence alternative (A) is correct answer.
- In an FET as VGS is changed from zero to increasing reverse bias, the value of gm—
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We know that
gm = gm0 1 - VGS VP
From the above relation it is clear that as VGS is changed from zero to increasing reverse bias, the value of gm decreases.Correct Option: B
We know that
gm = gm0 1 - VGS VP
From the above relation it is clear that as VGS is changed from zero to increasing reverse bias, the value of gm decreases.
- Compared to the junction transistor, FET—
1. Has a large gain bandwidth product
2. Is less noisy
3. Has less input resistance
4. Has only majority carriers flow
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As compare to BJT, FET is (i) Less noisy and (ii) Here only majority carrier flow.
Correct Option: C
As compare to BJT, FET is (i) Less noisy and (ii) Here only majority carrier flow.
- In amplifier applications FET is operated in the—
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In amplifier application FET is operated in the controlled resistor region.
Correct Option: A
In amplifier application FET is operated in the controlled resistor region.
- VP is the pinch-off voltage for VGS = 0 in an FET. When the gate is reverse biased by VG S the pinch-off voltage—
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Will be less than VPO, because when gate is reverse biased deplection width increases, which decreases the pinch-off voltage.
Correct Option: A
Will be less than VPO, because when gate is reverse biased deplection width increases, which decreases the pinch-off voltage.