496. When the temperature of an intrinsic semiconductor is increased—

1. 1. Resistance of the semiconductor increases.

   
   
   

   2. Heat energy decreases the atomic radius.

   
   
   

   3. Holes are created in the conduction band.

   
   
   

   4. Energy of the atoms is increased.

   
   
   

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   NA

   Correct Option: D

   NA

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497. When a voltage is applied to an intrinsic semiconductor which is at room temperature—

1. 1. Electrons move to the positive terminal and holes move to the negative terminal.

   
   
   

   2. Holes move to the positive terminal and electrons move to the negative terminal.

   
   
   

   3. Both holes and electrons move to the positive terminal.

   
   
   

   4. Both holes and electrons move to the negative terminal.

   
   
   

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   When a voltage is applied to an intrinsic semiconductor, electrons move to positive terminal and holes move to the negative terminal.
   

   Correct Option: A

   When a voltage is applied to an intrinsic semiconductor, electrons move to positive terminal and holes move to the negative terminal.
   

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498. Depth of focus (DOF) in photolithography is given by—

1. 1. NA

   
   
   

   2. 2 / (NA)²

   
   
   

   3. (NA)²

   
   
   

   4. 2 (NA)²

   
   
   

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   NA

   Correct Option: D

   NA

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499. Sheet resistance for 1-mil thick silicon wafer with phosphorous doping of 10¹⁶/cm³ and boron doping of 2 × 10¹⁶/cm³ is—

1. 1. 300 Ω/square

   
   
   

   2. 200 Ω/square

   
   
   

   3. 350 Ω/square

   
   
   

   4. 240 Ω/square

   
   
   

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   NA

   Correct Option: B

   NA

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500. The minimum number of isolation regions required for the circuit shown are—
     
     
     
     

1. 1. 2

   
   
   

   2. 3

   
   
   

   3. 4

   
   
   

   4. 7

   
   
   

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   NA

   Correct Option: A

   NA

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