Physical electronics devices and ics miscellaneous
- FET tuned amplifier with gm = 5 mA/V, rd = 20 kΩ has a resonant impedance of 20 kΩ. The gain resonance is given by—
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Given, gm = 5 mA/V, rd
= 20 kΩ,
Resonant impedance i.e. RD = 20 kΩ
Now, Gain = gm (rd//RD)
= 5 mA/V (20 kΩ//20 kΩ)
or Gain = 5 × 10–3 × 10 × 103 = 50Correct Option: B
Given, gm = 5 mA/V, rd
= 20 kΩ,
Resonant impedance i.e. RD = 20 kΩ
Now, Gain = gm (rd//RD)
= 5 mA/V (20 kΩ//20 kΩ)
or Gain = 5 × 10–3 × 10 × 103 = 50
- In the circuit shown below, both transistor have the same VT. What is the approximate value of the highest possible output voltage Vout, if Vin can range from 0 to VDD? (Assume 0 < VT < VDD)
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The given circuit
The highest possible output of the above circuit is V0 = VDD – VT
Where, VT is the threshold voltage and VDD supply voltageCorrect Option: A
The given circuit
The highest possible output of the above circuit is V0 = VDD – VT
Where, VT is the threshold voltage and VDD supply voltage
- The transconductance of (FET)1 is 100 µmho while the transconductance of (FET)2 is 50 µmho. The gate is more effective in controlling the drain current in the case of—
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The gate is more effective in controlling the drain current in the case of (FET)1 because higher the transconductance better gate controll.
Correct Option: A
The gate is more effective in controlling the drain current in the case of (FET)1 because higher the transconductance better gate controll.
- A common source FET amplifier has Cgs = 50 pF and Cgd = 5 pF. The value of source resistance RS for high 3 dB frequency of 100 kHz will be—
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Given, Cgs = 50 pF, Cgd = 5 pF, fT = 100 KHZ, RS =?
We know that, fT = 1 2 π(Cgd + Cgs) RS or RS = 1 2 π(Cgd + Cgs) fT or RS = 1 2 × 3·14 (50 + 5) × 10–12 × 100 × 103
or RS = 28·89 kΩ
Hence alternative (C) is the best option.Correct Option: C
Given, Cgs = 50 pF, Cgd = 5 pF, fT = 100 KHZ, RS =?
We know that, fT = 1 2 π(Cgd + Cgs) RS or RS = 1 2 π(Cgd + Cgs) fT or RS = 1 2 × 3·14 (50 + 5) × 10–12 × 100 × 103
or RS = 28·89 kΩ
Hence alternative (C) is the best option.
- For the FET source follower circuit shown below, RS1 >> RS2 and transconductance gm and drain source resistance rds are 2 × 10– 3 mho and 83 K respectively. The approximately value of input and output impedance are—
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NA
Correct Option: C
NA