461. The capacitance of a reverse-biased pn-junction—

1. 1. Increases as the reverse bias is decreased

   
   
   

   2. Increases as the reverse bias is increased

   
   
   

   3. Depends mainly on the reverse saturation current

   
   
   

   4. Makes the pn-junction more effective at high frequencies

   
   
   

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   NA

   Correct Option: A

   NA

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462. The barrier capacitance C_T—

1. 1. Increases with the width of the space charge layer

   
   
   

   2. Increases with increasing reverse voltage

   
   
   

   3. Is due to the immobile charges at the junction varying with the applied voltage

   
   
   

   4. Can be defined as Q/V

   
   
   

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   NA

   Correct Option: C

   NA

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463. In regard to I_S the saturation current of a pn-diode—

1. 1. I_S strongly depends on the reveres voltage bias

   
   
   

   2. I_S decreases with increasing temperature

   
   
   

   3. I_S is due to thermally generating minority carriers

   
   
   

   4. I_S is mainly a diffusion current at the junction

   
   
   

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   NA

   Correct Option: C

   NA

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464. When reverse bias is applied to a pn-junction—

1. 1. The barrier potential is decreased

   
   
   

   2. Majority carriers flow down the potential

   
   
   

   3. Thermally-generated minority carriers are responsible for the saturation current

   
   
   

   4. Minority carriers are holes from p-side moving to the n-side

   
   
   

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   NA

   Correct Option: C

   NA

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465. At the junction of a pn-diode—

1. 1. The depletion region has an electrostatic potential which makes p-side positive with respect to the n-side

   
   
   

   2. The space charge region exists predominantly in the heavily doped junction

   
   
   

   3. Holes are prevented from diffusing from n-side to the p-side

   
   
   

   4. The electric field at the junction is of such value as to cause the diffusive tendency to be counterbalanced by the drift velocity of electrons and holes

   
   
   

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   NA

   Correct Option: D

   NA

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