441. In voltage reference diodes—

1. 1. The breakdown mechanism is only due to zener effect

   
   
   

   2. For low voltages and heavily doped material the breakdown is due to avalanche multiplication

   
   
   

   3. For a limiting reverse voltage which can be used as reference, the reverse current increases depending on the circuit connected

   
   
   

   4. The current flow at the reference voltage is due to minority carrier injection
      

   
   
   

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1. View Hint View Answer Discuss in Forum

   For a given voltage reference diode the reverse current depends on the circuit through which this resistance is connected.
   

   Correct Option: C

   For a given voltage reference diode the reverse current depends on the circuit through which this resistance is connected.
   

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442. In switching a junction diode from forward to reverse bias, the transition interval is the period from the time—

1. 1. The diode voltage begins to reverse to the time when the diode has nominally recovered

   
   
   

   2. When the diode is forward biased to the time when it is reverse biased

   
   
   

   3. Of forward bias to the time diode voltage has attained zero value

   
   
   

   4. None of these
      

   
   
   

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1. View Hint View Answer Discuss in Forum

   NA

   Correct Option: A

   NA

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443. In switching a junction diode from forward to reverse voltage bias, the recovery of the current to the saturation value is delayed. During this time—
     

1. 1. The current is in the same direction as the forward current

   
   
   

   2. The excess minority carriers have to drop to zero

   
   
   

   3. The excess minority carriers have disappeared and the minority carrier density reaches zero value at the junction

   
   
   

   4. The voltage across the diode is in the direction of forward bias

   
   
   

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1. View Hint View Answer Discuss in Forum

   NA

   Correct Option: C

   NA

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444. For a given emitter current, the collector current will be higher if—

1. 1. The recombination rate in the base region were decreased

   
   
   

   2. The emitter region were more lightly doped

   
   
   

   3. The minority-carrier mobility in the base region were reduced

   
   
   

   4. The base region were made wider
      

   
   
   

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1. View Hint View Answer Discuss in Forum

   NA

   Correct Option: A

   NA

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445. The emitter region in the p-n-p junction transistor is more heavily doped than the base region so that—
     

1. 1. The flow across the base region will be mainly because of electron

   
   
   

   2. The flow across the base region will be mainly because of holes

   
   
   

   3. Recombination will be increased in the base region

   
   
   

   4. Base current will be high

   
   
   

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1. View Hint View Answer Discuss in Forum

   NA

   Correct Option: B

   NA

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