Physical electronics devices and ics miscellaneous
- Depletion layer width.......under.......condition and....... under .......condition.
-
View Hint View Answer Discuss in Forum
Depletion layer width decreases under forward biased condition and increases under reverse biased condition.
Correct Option: A
Depletion layer width decreases under forward biased condition and increases under reverse biased condition.
- Reverse saturation of silicon diode at 25ºC is 20 nA. The reverse saturation current at 60C will be—
-
View Hint View Answer Discuss in Forum
I’ = I 02 Tf - Ti 10 = 20 nA × 2 60° – 25° 10
= 20 × 28.5 nA
Where,
I0 = Leakage current
If = Final temperature
Ii = Initial temperatureCorrect Option: D
I’ = I 02 Tf - Ti 10 = 20 nA × 2 60° – 25° 10
= 20 × 28.5 nA
Where,
I0 = Leakage current
If = Final temperature
Ii = Initial temperature
- When a diode is heavily doped—
(A) The zener voltage will be low
(B) The avalanche voltage will be high
(C) The depletion region will be thin
(D) The leakage current will be low
-
View Hint View Answer Discuss in Forum
When a diode is heavily doped the depletion region will be thin.
Correct Option: C
When a diode is heavily doped the depletion region will be thin.
- Leakage current of a junction diode—
-
View Hint View Answer Discuss in Forum
Leakage current of a junction diode decreases with decreasing temperature.
Correct Option: B
Leakage current of a junction diode decreases with decreasing temperature.
- When reverse bias is applied to a junction diode, it—
-
View Hint View Answer Discuss in Forum
When reverse bias is applied to a junction diode it increases the potential barrier.
Correct Option: A
When reverse bias is applied to a junction diode it increases the potential barrier.