Physical electronics devices and ics miscellaneous


Physical electronics devices and ics miscellaneous

Physical Electronics Devices and ICs

  1. Depletion layer width.......under.......condition and....... under .......condition.









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    Depletion layer width decreases under forward biased condition and increases under reverse biased condition.

    Correct Option: A

    Depletion layer width decreases under forward biased condition and increases under reverse biased condition.


  1. Reverse saturation of silicon diode at 25ºC is 20 nA. The reverse saturation current at 60C will be—









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    I’ = I 02Tf - Ti
    10

    = 20 nA × 2 60° – 25°
    10

    = 20 × 28.5 nA
    Where,
    I0 = Leakage current
    If = Final temperature
    Ii = Initial temperature

    Correct Option: D

    I’ = I 02Tf - Ti
    10

    = 20 nA × 2 60° – 25°
    10

    = 20 × 28.5 nA
    Where,
    I0 = Leakage current
    If = Final temperature
    Ii = Initial temperature



  1. When a diode is heavily doped—
    (A) The zener voltage will be low
    (B) The avalanche voltage will be high
    (C) The depletion region will be thin
    (D) The leakage current will be low









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    When a diode is heavily doped the depletion region will be thin.

    Correct Option: C

    When a diode is heavily doped the depletion region will be thin.


  1. Leakage current of a junction diode—









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    Leakage current of a junction diode decreases with decreasing temperature.

    Correct Option: B

    Leakage current of a junction diode decreases with decreasing temperature.



  1. When reverse bias is applied to a junction diode, it—









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    When reverse bias is applied to a junction diode it increases the potential barrier.

    Correct Option: A

    When reverse bias is applied to a junction diode it increases the potential barrier.