Physical electronics devices and ics miscellaneous

Physical electronics devices and ics miscellaneous

Easy Questions

Physical Electronics Devices and ICs

Physical electronics devices and ics miscellaneous
  1. The measured transconductance gm of an NMOS transistor operating in the linear region is plotted against the gate voltage VG at a constant drain voltage V D. Which of the following figures represents the expected dependence of gm on VG?








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    NA

    Correct Option: A

    NA

  1. For a MOS capacitor fabricated on a p-type semiconductor, strong inversion occur when—








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    For a MOS capacitor fabricated on a p-type semiconductor, strong inversion occur when surface potential is negative and equal to the fermi potential in magnitude.

    Correct Option: C

    For a MOS capacitor fabricated on a p-type semiconductor, strong inversion occur when surface potential is negative and equal to the fermi potential in magnitude.

  1. Secondary breakdown occurs in—








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    Secondary breakdown occurs in BJT but not in MOSFET.

    Correct Option: C

    Secondary breakdown occurs in BJT but not in MOSFET.

  1. Choose the correct statement—








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    MOSFET is a voltage controlled device whereas BJT is a current controlled device.

    Correct Option: C

    MOSFET is a voltage controlled device whereas BJT is a current controlled device.

  1. Choose the correct statement—








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    MOSFET has positive temperature coefficient whereas BJT has negative temperature coefficient.

    Correct Option: A

    MOSFET has positive temperature coefficient whereas BJT has negative temperature coefficient.