511. Order of temperature for epitaxial growth is—

1. 1. 800ºC

   
   
   

   2. 2000ºC

   
   
   

   3. 500ºC

   
   
   

   4. 1200ºC

   
   
   

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1. View Hint View Answer Discuss in Forum

   NA

   Correct Option: D

   NA

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512. Epitaxial growth in IC chip—

1. 1. Growth from liquid phase

   
   
   

   2. Can be p-type only

   
   
   

   3. Growth from gas phase

   
   
   

   4. Can be n-type only

   
   
   

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1. View Hint View Answer Discuss in Forum

   NA

   Correct Option: C

   NA

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513. Material used for fabrication of gate in modern MOSFET is—

1. 1. Highly pure Si

   
   
   

   2. Highly pure SiO₂

   
   
   

   3. Si

   
   
   

   4. Highly doped polysilicon

   
   
   

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1. View Hint View Answer Discuss in Forum

   NA

   Correct Option: D

   NA

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514. A properly biased JFET will act as a—

1. 1. Current controlled current source

   
   
   

   2. Current controlled voltage source

   
   
   

   3. Voltage controlled voltage source

   
   
   

   4. Voltage controlled current source

   
   
   

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1. View Hint View Answer Discuss in Forum

   A properly biased JFET will act as a voltage controlled current source.

   Correct Option: D

   A properly biased JFET will act as a voltage controlled current source.

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515. In an FET as V_GS is changed from zero to increasing reverse bias, the value of g_m—

1. 1. Increases

   
   
   

   2. Decreases

   
   
   

   3. Remains constant

   
   
   

   4. Falls suddenly to zero

   
   
   

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1. View Hint View Answer Discuss in Forum

   In an FET as V_GS is changed from zero to increasing reverse bias the value of g_m decreases.

   Correct Option: B

   In an FET as V_GS is changed from zero to increasing reverse bias the value of g_m decreases.

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