321. Substrate in a monolithic IC chip has thickness of about—

1. 1. 1 mm

   
   
   

   2. 5 mm

   
   
   

   3. 50 mm

   
   
   

   4. 200 mm
      

   
   
   

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   NA

   Correct Option: B

   NA

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322. Isolation diffusion in a monolithic IC creates concentration of acceptor atoms in the region between the isolation islands of the order of—

1. 1. 10¹⁵ cm^–3

   
   
   

   2. 10²⁰ cm^–3

   
   
   

   3. 10²⁵ cm^–3

   
   
   

   4. 10³⁰ cm^–3

   
   
   

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   NA

   Correct Option: B

   NA

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323. The photoetching process consists in—

1. 1. Remove of photoresist

   
   
   

   2. Curbing lines on the waver before dicing

   
   
   

   3. Diffusing impurities

   
   
   

   4. Removed of layer from selected portion
      

   
   
   

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   NA

   Correct Option: D

   NA

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324. A diffused resistor in an IC—

1. 1. Is fabricated before transistor diffusion

   
   
   

   2. Is fabricated after transistor diffusion

   
   
   

   3. Can be fabricated with precision for any resistance value

   
   
   

   4. Is formed along with fabrication of transistors

   
   
   

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   NA

   Correct Option: D

   NA

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325. Epitaxial growth is a—

1. 1. Layer formation of silicon or germanium atoms upon semiconductor wafer when it is heated in an atomsphere containing semiconductor atoms

   
   
   

   2. A process in which small pellets of semiconductor are melted into a semiconductor wafer

   
   
   

   3. A technique in which holes are etched in a wafer before the allying process

   
   
   

   4. An extension of microalloy technique with impurities diffused into base region

   
   
   

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1. View Hint View Answer Discuss in Forum

   NA

   Correct Option: A

   NA

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