436. In any p-n junction, the transition capacitance C_T varies as—

1. 1. W

   
   
   

   2. W²

   
   
   

   3. 	1
      	W

   
   
   

   4. √W where W is the width of the depletion layer.

   
   
   

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   NA

   Correct Option: C

   NA

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437. In a linearly graded reverse biased junction. The width W of the depletion layer varies as—

1. 1. √V_J

   
   
   

   2. V_J

   
   
   

   3. V_J ^{1 / 3}

   
   
   

   4. 	1
      	VJ

      
      

   
   
   

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   NA

   Correct Option: C

   NA

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438. In a step graded reverse biased junction. The width of the depletion layer varies as (where V_J is the magnitude of the junction potential)—

1. 1. √V_J

   
   
   

   2. V_J

   
   
   

   3. V² J

   
   
   

   4. 	1
      	VJ

      
      

   
   
   

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   NA

   Correct Option: A

   NA

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439. In a p-n-p transistor biased in the active region, the dominant carrier flow is—

1. 1. Excess holes drifting in the base region

   
   
   

   2. Minority carriers electrons injected from base to emitter

   
   
   

   3. Minority carriers diffusing in the emitter region

   
   
   

   4. Due to concentration gradient of holes, holes diffusing in the base region

   
   
   

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   NA

   Correct Option: D

   NA

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440. Tunnel diodes—

1. 1. Are mainly operated with reverse bias

   
   
   

   2. Have a negative resistance region with reverse bias

   
   
   

   3. Has very high impurity concentration thus increasing the barrier width

   
   
   

   4. Electrons have a finite probability of penetrating the potential barrier

   
   
   

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   NA

   Correct Option: D

   NA

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