MOSFET is fast switching device as its input impedance is very high ≈ 10¹⁵ Ω, resulting very negligible loading effect.

Correct Option: A

MOSFET is fast switching device as its input impedance is very high ≈ 10¹⁵ Ω, resulting very negligible loading effect.

With rise in temperature, the conductivity decreases which can be easily explained by equation,
σ = nq µ_n
where, σ = conductivity of a metal
n = no. of free electrons in a metal
q = charge of electron
µ_n = mobility of electron.
With rise in temperature there will be no effect on n and q. However as temperature rises, ions present in the crystal lattice becomes vibrate, resulting decreases in mobility, µ_n. Because mobility of an electron defines as how freely electron moves in a crystal. Hence conductivity of metal decreases with rise in temperature.

Correct Option: B

With rise in temperature, the conductivity decreases which can be easily explained by equation,
σ = nq µ_n
where, σ = conductivity of a metal
n = no. of free electrons in a metal
q = charge of electron
µ_n = mobility of electron.
With rise in temperature there will be no effect on n and q. However as temperature rises, ions present in the crystal lattice becomes vibrate, resulting decreases in mobility, µ_n. Because mobility of an electron defines as how freely electron moves in a crystal. Hence conductivity of metal decreases with rise in temperature.

For p-type semiconductor.
p ≈ NA → At room temperature
Hence alternative (C) is the correct choice.

Correct Option: C

For p-type semiconductor.
p ≈ NA → At room temperature
Hence alternative (C) is the correct choice.

Refer synopsis

Correct Option: C

Refer synopsis

Saturation current, I_s is due to thermally generated minority carriers

Correct Option: C

Saturation current, I_s is due to thermally generated minority carriers