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The change in barrier potential of silicon p-n junction with temperature is—
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- 0·025 volts per degree C
- 0·250 volts per degree C
- 0·030 volts per degree C
- 0·014 volts per degree C
Correct Option: A
The change in barrier potential of a silicon pn-diode with temperature is approximately 2 mV. Therefore alternative (A) is the most correct choice.
