An intrinsic semiconductor with energy gap 1 eV has a carrier

An intrinsic semiconductor with energy gap 1 eV has a carrier concentration N at temperature 200 K. Another intrinsic semiconductor has the same value of carrier concentration N at temperature 600 K. What is the energy gap value for the second semiconductor?

Given E_g1 = 1_eV, T₁ = 200 K, T₂ = 600 K, E_g2 =?

Eg₁	=	T₂
Eg₂	=	T₁

Where Eg = Energy band gap
T = Temperature

Now, Eg₂ = Eg₁ ×	T₁
	T₂

= 1eV ×	200 K	=	1eV
	600 K		3

Hence alternative (D) is the correct choice.