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Pure Si is experimentally determined to exhibit a carrier (electron or hole) density of 1·48 × 1010 electrons (holes) cm3 at 300° K. If the electron mobility and hole mobility is 1300 cm2/Vs and 500 cm2/Vs, the resistivity of an intrinsic Si specimen at 300 °K is …………?
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- 2·35 × 105 Ω m
- 1·18 × 105 Ω m
- 2·35 × 105 Ωcm
- Cannot be determined
Correct Option: C
Given
µi = 1·48 × 1010 cm3
µn = 1300 cm2/V–s
µp = 500 cm2/V–s
i =?
We know that, i = | = | i | q ni (µn + µp) |
or i = | 1·6 × 10–19 × 1·48 × 1010 (1300 + 500) |
or i = 2·35 × 105 Ω–cm
Hence alternative (C) is the correct choice.