Match List-I (Diode type) with List-II (Important properties)

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Match List-I (Diode type) with List-II (Important properties) and select the correct answer using the code given below the lists—
List-I
(a) Zener Diode
(b) Gunn Diode
(c) Schottky Diode
(d) Tunnel Diode
List-II
1. Negative resistance device fabricated using semiconductors like Si, Ga, As, Ge etc. can be operated at a frequency of 10 GHz.
2. Quantum mechanical tunnelling with very thin depletions layers under reverse bias operated as a reference voltage sources.
3. Negative conductance device, operates on the principle of transfer of electron from one region of conduction band to another.
4. Metal-semiconductor diode, have rectification properties. Codes:

1. 2431
2. 1342
3. 2341
4. 1432

Correct Option: C

● Zener diode → Quantum mechanical tunnelling with very thin depletion layers under reverse bias operated as a reference voltage sources.
● Gunn diode → Negative conductance device, operates on the principle of transfer of electrons from one region of conduction band to another.
● Schottky Diode → Metal-semiconductor diode, have rectification properties.
● Tunnel diode → Negative resistance device fabricated using semiconductors like Si, Ga, As, Ge etc. can be operated at a frequency of 10 GHz.