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Physical electronics devices and ics miscellaneous

Physical Electronics Devices and ICs

  1. Which one of the following statements is correct in respect of BJT?
    1. Avalanche multiplication starts when the reverse biased collector-base voltage VCB equals the avalanche breakdown voltage BVCBO
    2. The early effect starts as soon as punch-through occurs in a transistor
    3. The small signal current hfe = large signal current gain hFE when hFE/ IC = 0
    4. In the CE mode, transistor can be cut off by reducing IB to zero
Correct Option: A

Avalanche multiplication starts when the reverse biased collector-base voltage VCB equals the avalanche breakdown voltage BVCBO. We know that the maximum reverse-biasing voltage which may be applied before breakdown between the collector and base terminals of the transistor, under the condition that the emitter lead be open circuited is represented by the symbol BVCBO. This breakdown voltage is a characteristic of a transistor alone, breakdown may occur because of avalanche multiplication of the current ICO that crosses the collector junction.



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