Consider the following statements associated with bipolar

Home » Physical Electronics Devices and ICs » Physical electronics devices and ics miscellaneous » Question

Consider the following statements associated with bipolar junction transistor and junction gate FET—
1. The former has higher input impedance than the latter.
2. The former has higher frequency capability than the latter.
3. The latter has lower noise figure than the former.
4. The latter has higher power rating than the former. Of these statements—

1. 1 and 2 are correct
2. 2 and 3 are correct
3. 3 and 4 are correct
4. 1 and 4 are correct

Correct Option: B

The main advantage of BJT over FET is that BJT has higher frequency capability that FET. While BJT has higher noise figure than the FET, this is the main disadvantage. Hence alternative (B) is the correct answer.