The drain-source output V-I characteristics of an n-channel

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The drain-source output V-I characteristics of an n-channel depletion FET has—

1. I_DS = 0 at V_GS = 0
2. I_DS = positive maximum at V_GS = 0
3. I_DS = negative maximum at V_GS = 0
4. I_DS = independent of V_GS

Correct Option: B

We know that drain source output V-I characteristics of an n-channel depletion FET is given by relation I_D = I_DSS 1 – V_GS V_P ² from this relation it is clear that IDS will be positive and maximum when V_GS = 0, and on increasing V_GS the drain current decreases. Hence alternative (B) is the correct answer.