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A silicon semiconductor sample at T = 300 K is doped with phosphorus atoms at a concentrations of 1015 cm– 3. The position of the Fermi level with respect to the intrinsic Fermi level is—
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- 0.3 eV
- 0.2 eV
- 0.1 eV
- 0.4 eV
Correct Option: A
We know that,
| EF – EFi = kT In |  | Nd |  |
| Ni |
| = 26 meV In | | | |
| 1.5 × 1010 |
| = 26 × 10–3 | | | eV | |
| 1.5 × 1010 |
= 0.287 eV
≅ 0.3 eV
Hence alternative (A) is the correct choice.
