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Physical electronics devices and ics miscellaneous

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Physical Electronics Devices and ICs

Physical electronics devices and ics miscellaneous
  1. A gallium arsenide semiconductor at T = 300 K is doped with impurity concentration Nd = 1016 cm–3. The mobility µa is 7500 cm2/V - s. For an applied field of 10 V/cm the drift current density is—
    1. 120 A/cm2
    2. 120 A/cm2
    3. 12 × 104 A/cm2
    4. 12 × 104 A/cm2
Correct Option: A

Given data
Nd = 1016 cm–3
µn = 7500 cm2/ V-s
E = 10 v/cm
Jdrift =?
Jdrift = 9. µn. n.
E = 1.6 × 10–19 × 7500 × 1016 × 10
∴ Nd >> ni = 120 A/ cm2


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