If P is passivation, Q is n-well implant, R is metallization

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If P is passivation, Q is n-well implant, R is metallization and S is source/drain diffusion, then the order in which they are carried out in a standard n-well CMOS fabrication process is—

1. S - R - Q - P
2. R - P - S - Q
3. Q - S - R - P
4. P - Q - R - S

Correct Option: B

NA